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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs : 9.3 nC @ 10 V
Product Status : Active
Mounting Type : Surface Mount
Package : Tape & Reel (TR) Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds : 550 pF @ 10 V
Series : Automotive, AEC-Q101, U-MOSVIII-H
Vgs (Max) : ±20V
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Supplier Device Package : SOT-23F
Rds On (Max) @ Id, Vgs : 36mOhm @ 5A, 10V
Mfr : Toshiba Semiconductor and Storage
Operating Temperature : 175°C
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Power Dissipation (Max) : 1.2W (Ta)
Package / Case : SOT-23-3 Flat Leads
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Technology : MOSFET (Metal Oxide)
FET Feature : -
Description : AECQ MOSFET NCH 60V 6A SOT23F
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