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SQ2362ES-T1_BE3

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SQ2362ES-T1_BE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 12 nC @ 10 V

Rds On (Max) @ Id, Vgs : 68mOhm @ 2.4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 550 pF @ 30 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, TrenchFET®

Supplier Device Package : SOT-23-3 (TO-236)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 4.3A (Tc)

Power Dissipation (Max) : 3W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SQ2362

Description : MOSFET N-CH 60V 4.3A SOT23-3

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N-Channel 60 V 4.3A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

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