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2SK3666-3-TB-E

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2SK3666-3-TB-E

Transistor Polarity : N-Channel

Vgs - Gate-Source Breakdown Voltage : - 30 V

Product Category : JFET

Mounting Style : SMD/SMT

Id - Continuous Drain Current : 10 mA

Drain-Source Current at Vgs=0 : 3 mA

Pd - Power Dissipation : 200 mW

Package / Case : SC-59-3

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 30 V

Packaging : Reel

Configuration : Single

Series : 2SK3666

Rds On - Drain-Source Resistance : 200 Ohms

Manufacturer : onsemi

Description : JFET SWITCHING DEVICE

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The 2SK3666-3-TB-E,from onsemi,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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