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STGD6NC60H-1

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STGD6NC60H-1

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Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 15 A

Pd - Power Dissipation : 62.5 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : IPAK-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.9 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors IGBT & Power Bipolar

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The STGD6NC60H-1,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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