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STGWA25H120F2

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STGWA25H120F2

Gate-Emitter Leakage Current : 250 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 50 A

Collector- Emitter Voltage VCEO Max : 1200 V

Pd - Power Dissipation : 375 W

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 20 V

Configuration : Single

Collector-Emitter Saturation Voltage : 2.5 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors IGBT & Power Bipolar

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The STGWA25H120F2,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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